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Technology
core technology
Product Introduction

With the development of semiconductor technology, the capacity density of non-volatile storage (NVM) media represented by NAND flash memory continues to increase, and the capacity cost continues to decrease. At the same time, it also has advantages such as fast random access response and high aggregate throughput. SSD based on NAND flash memory has become an ideal option to store active data in the system instead of replace mechanical disks.


TAI is an NVMe SSD controller designed by DERA for enterprise and data center, based on data reliability assurance and flash memory performance aggregation core technology. TAI controller supports up to 16 NAND channels and mainstream device models from multiple NAND manufacturers, at the same time provides flexible configuration options. Based on TAl controller, developers can build enterprise NVMe SSDs with leading reliability and performance.

PCIe Gen3x4
16 NAND channels
Up to 16TB capacity
Support mainstream NAND flash
Functional Features
功能框图.jpg
  • NVMe 1.3 compliance, support PCIe Gen3 x4

  • Support NVMe optional command and vendor specific command, realize customized firmware

  • Support mainstream NAND flash, support both ONFI and TOGGLE

  • 512GB-16TB total raw-capacity

  • 16 NAND channels, 1.8V/1.2V VCCQ, 533MT/s I/O speed. Up to 16 NAND Dies per channel

  • Up to 5GB/s/ 4GB/s sequential read/ write bandwidth, up to 4KB random read 1M IOPS

  • Dual channels 40bit DDR controller with ECC protection, DDR3/3L 1333MT/s, up to 16GB DRAM

  • Support AES256 hardware encryption

  • SPI NOR with ECC protection, multiple general interfaces: 5*UART, 2*I2C, 16*GPIO and 2*SPI

  • All internal RAM protected by ECC, whole end-to-end CRC data path protection

ECC and data integrity protection
Design flexibility
The TAI controller provides flexible design options, so developer could customize software to reach the balance among cost, power and performance.
With target requirement and product definition, developer could make choice at ECC strength,NAND channel number/ capacity,DRAM channel number/ capacity,DRAM ECC on/ off,DRAM and/ or NAND interface, till getting an optimized solution.
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